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absolute maximum ratings parameter n-channel p-channel units i d @ v gs = 12v, t c = 25c continuous drain current 1.0 -0.75 i d @ v gs = 12v, t c = 100c continuous drain current 0.6 -0.5 i dm pulsed drain current 4.0 -3.0 p d @ t c = 25c max. power dissipation 1.4 1.4 w linear derating factor 0.011 0.011 w/c v gs gate-to-source voltage 20 20 v e as single pulse avalanche energy 56 75 2 mj i ar avalanche current 1.0 -0.75 a e ar repetitive avalanche energy 0.14 0.14 mj dv/dt peak diode recovery dv/dt 2.4 a 2.4 3 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (typical) g pre-irradiation o c a radiation hardened power mosfet thru-hole (mo-036ab) 3/15/00 www.irf.com 1 product summary part number radiation level r ds(on) i d channel IRHG6110 100k rads (si) 0.6 w 1.0a n irhg63110 300k rads (si) 0.6 w 1.0a n IRHG6110 100k rads (si) 1.1 w -0.75a p irhg63110 300k rads (si) 1.1 w -0.75a p features: n single event effect (see) hardened n low r ds(on) n low total gate charge n proton tolerant n simple drive requirements n ease of paralleling n hermetically sealed n ceramic package n light weight for footnotes refer to the last page mo-036ab IRHG6110 100v, combination 2n-2p-channel rad-hard ? hexfet ? mosfet technology international rectifiers rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applica- tions. these devices have been characterized for both total dose and single event effects (see). the combina- tion of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc con- verters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and tempera- ture stability of electrical parameters. pd - 93783a
IRHG6110 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 1.0 i sm pulse source current (body diode) 4.0 v sd diode forward voltage 1.5 v t j = 25c, i s = 1.0a, v gs = 0v ? t rr reverse recovery time 110 ns t j = 25c, i f = 1.0a, di/dt 3 100a/ m s q rr reverse recovery charge 390 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics for each n-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.125 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.7 v gs = 12v, i d = 1.0a resistance 0.6 v gs = 12v, i d = 0.6a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.7 s ( )v ds > 15v, i ds = 0.6a ? i dss zero gate voltage drain current 25 v ds = 80v, v gs = 0v 250 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 16 v gs =12v, i d = 1.0a, q gs gate-to-source charge 3.0 nc v ds = 50v q gd gate-to-drain (miller) charge 4.0 t d (on) turn-on delay time 12 v dd = 50v, i d = 1.0a, t r rise time 16 r g = 24 w t d (off) turn-off delay time 65 t f fall time 45 l s + l d total inductance 10 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 300 v gs = 0v, v ds = 25v c oss output capacitance 100 pf f = 1.0mhz c rss reverse transfer capacitance 16 na w ? nh ns m a w thermal resistance parameter min typ max units test conditions r thjc junction-to-case 17 r thja junction-to-ambient 90 typical socket mount c/w note: corresponding spice and saber models are available on the g&s website.
www.irf.com 3 pre-irradiation IRHG6110 for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) -0.75 i sm pulse source current (body diode) -3.0 v sd diode forward voltage -2.5 v t j = 25c, i s = -0.75a, v gs = 0v ? t rr reverse recovery time 90 ns t j = 25c, i f = -0.75a, di/dt 3 -100a/ m s q rr reverse recovery charge 257 nc v dd -25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 17 r thja junction-to-ambient 90 typical socket mount c/w electrical characteristics for each p-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma d bv dss / d t j temperature coefficient of breakdown -0.11 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 1.2 v gs = -12v, i d = -0.75a resistance 1.1 v gs = -12v, i d =- 0.5a v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 0.6 s ( )v ds > -15v, i ds = -0.5a ? i dss zero gate voltage drain current -25 v ds = -80v, v gs = 0v -250 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = - 20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 19 v gs = -12v, i d = -0.75a, q gs gate-to-source charge 4.0 nc v ds = -50v q gd gate-to-drain (miller) charge 4.3 t d (on) turn-on delay time 22 v dd = -50v, i d = -0.75a, t r rise time 19 r g = 24 w t d (off) turn-off delay time 66 t f fall time 51 l s + l d total inductance 10 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 335 v gs = 0v, v ds = 25v c oss output capacitance 100 pf f = 1.0mhz c rss reverse transfer capacitance 22 na w ? nh ns m a w note: corresponding spice and saber models are available on the g&s website.
IRHG6110 pre-irradiation 4 www.irf.com table 1. electrical characteristics for each n-channel device @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? 0.56 0.66 w v gs = 12v, i d = 0.6a on-state resistance (to-39) r ds(on) static drain-to-source ? 0.60 0.70 w v gs = 12v, i d = 0.6a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. part number IRHG6110 2. part number irhg63110 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 1.5 v v gs = 0v, i s =1.0a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page radiation characteristics table 2. single event effect safe operating area for each n-channel device ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28.0 285 43.0 100 100 100 80 60 br 36.8 305 39.0 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br
www.irf.com 5 pre-irradiation IRHG6110 table 1. electrical characteristics for each p-channel device @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage ? - 2.0 - 4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -25 -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? 1.06 1.06 w v gs = -12v, i d =-0.5a on-state resistance (to-39) r ds(on) static drain-to-source ? 1.1 1.1 w v gs = -12v, i d =-0.5a on-state resistance (mo-036ab) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHG6110 2. part number irhg63110 fig a. single event effect, safe operating area v sd diode forward voltage ? -2.5 -2.5 v v gs = 0v, i s = -0.75a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i table 2. single event effect safe operating area for each p-channel device ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =20v cu 28.0 285 43.0 -100 -100 -100 -70 -60 br 36.8 305 39.0 -100 -100 -70 -50 -40 i 59.8 343 32.6 -60
IRHG6110 pre-irradiation 6 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics n-channel q1,q3 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 1.0a
www.irf.com 7 pre-irradiation IRHG6110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage n-channel q1,q3 1 10 100 0 100 200 300 400 500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.0a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 0.1 1 10 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRHG6110 pre-irradiation 8 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature n-channel q1,q3 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 9 pre-irradiation IRHG6110 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v n-channel q1,q3 . 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.45a 0.63a 1.0a
IRHG6110 pre-irradiation 10 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics p-channel q2,q4 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 5 7 9 11 13 15 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -0.75a
www.irf.com 11 pre-irradiation IRHG6110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage p-channel q2,q4 1 10 100 0 100 200 300 400 500 600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 12 14 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.75a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms
IRHG6110 pre-irradiation 12 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -12v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f p-channel q2,q4 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.2 0.3 0.5 0.6 0.8 t , case temperature ( c) -i , drain current (a) c d
www.irf.com 13 pre-irradiation IRHG6110 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - -12v -12v p-channel q2,q4 . 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.34a -0.47a -0.75a
IRHG6110 pre-irradiation 14 www.irf.com ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a 2 v dd = - 25v, starting t j = 25c, l= 267mh, peak i l = - 0.75a, v gs = -12v 3 i sd - 0.75a, di/dt - 132a/ m s, v dd -100v, t j 150c repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 112mh, peak i l = 1.0a, v gs = 12v a i sd 1.0a, di/dt 187a/ m s, v dd 100v, t j 150c ? pulse width 300 m s; duty cycle 2% case outline and dimensions mo-036ab footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 3/00

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